Effect of annealing temperature on nano structured bi- layer thin films of Antimony and Tellurium
A. Purohit
Department of Electronics and Communication Engineering, Vivekananda Global University, Jaipur-303012, India , IN
Y. C. Sharma
Department of Electronics and Communication Engineering, Vivekananda Global University, Jaipur-303012, India , IN
Keywords: Bi-layer, ADXRD, SEM, , structural, morphological, I-V properties
Abstract
Antimony telluride (Sb2Te3) has high thermoelectric performance at room temperature. It has high electrical conductivity and high thermoelectric power with low thermal conductivity. In present work nano structured bi-layer thin films of Sb and Te of thickness 28 nm were fabricated on Si substrates using vapor deposition technique. These Bi-layer thin films were annealed at different temperatures of 100°C and 300°C and the variation in structural, morphological and Electrical properties were studied. It is reported that good quality bi-layer thin films of crystalline structured having optimum electrical properties have been formed.
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