EFFECT OF WO3 DOPING CONCENTRATION ON THE PROPERTIES V2O5 THIN FILMS PREPARED BY VACUUM DEPOSITION TECHNIQUE

Abstract

Vanadium pentoxide (V2O5) is the promising material for energy storage applications. In the present work pure and WO3 doped (2, 4, 6 and 8 wt. %) V2O5 thin films were prepare by vacuum deposition technique on ITO substrate. The structural behavior has been carried out by XRD and crystalline WO3 doped vanadium pentoxide (V2O5) exhibits orthorombic structure. The surface morphological images of the WO3 doped V2O5 thin films shows granular surface which has been investigated by FESEM. Optical behavior indicates that the band gap decreasing (from 2.98 to 2.77 ev) with increasing doping concentration. Raman spectra were studied, in which several bands observed for these thin films have been explained on the basis of different bending, stretching band lattice phonon vibration modes occurring in the films. The electrochemical analysis results shows the WO3 doped V2O5 exhibits the capacity of about 260 mAh/g after 100 cycles.