FinFET Based Schmitt trigger Technique

Authors

  • Tejashwini J Dept.of ECE, Sahyadri College of Engineering and Management
  • Sheetal Rao Dept.of ECE, Sahyadri College of Engineering and Management
  • Swastika Dept. of ECE, Sahyadri College of Engineering and Management
  • Swathi PK Dept. of ECE, Sahyadri College of Engineering and Management
  • Dr. Ashwath Rao Dept. of ECE, Sahyadri College of Engineering and Management

Keywords:

Schmitt Trigger, FinFET, Dual Sleep Technique

Abstract

Most of the devices that are used today are portable and it is highly necessary for these devices to have long battery life. The battery life of these gadgets is dependent on the power consumption of the components in the devices. For the good performance of systems, minimization of the power is essential. There are different techniques used to efficiently reduce the power consumption. Different parameters have been calculated and compared. Hence, in order to reduce the power consumption we have designed Schmitt Trigger circuit using one of the leakage reduction techniques called the Dual Sleep Technique. The average leakage power which we obtained in the Dual Sleep method is 9.22699nW, which was comparatively less as that of conventional CMOS. The simulation of the circuit is done using the Cadence Virtuoso Tool.

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Published

2019-05-01

How to Cite

Tejashwini J, Rao, S. ., Swastika, PK, S. ., & Rao, D. A. . (2019). FinFET Based Schmitt trigger Technique. International Journal of Technical Innovation in Modern Engineering & Science, 5(5), 844–849. Retrieved from https://ijtimes.com/index.php/ijtimes/article/view/2621