FinFET Based Schmitt trigger Technique
Tejashwini J
Dept.of ECE, Sahyadri College of Engineering and Management , IN
Sheetal Rao
Dept.of ECE, Sahyadri College of Engineering and Management , IN
Swastika
Dept.of ECE, Sahyadri College of Engineering and Management , IN
Swathi PK
Dept.of ECE, Sahyadri College of Engineering and Management , IN
Dr. Ashwath Rao
Dept.of ECE, Sahyadri College of Engineering and Management , IN
Keywords: Schmitt Trigger, FinFET, Dual Sleep Technique
Abstract
Most of the devices that are used today are portable and it is highly necessary for these devices to have long battery life. The battery life of these gadgets is dependent on the power consumption of the components in the devices. For the good performance of systems, minimization of the power is essential. There are different techniques used to efficiently reduce the power consumption. Different parameters have been calculated and compared. Hence, in order to reduce the power consumption we have designed Schmitt Trigger circuit using one of the leakage reduction techniques called the Dual Sleep Technique. The average leakage power which we obtained in the Dual Sleep method is 9.22699nW, which was comparatively less as that of conventional CMOS. The simulation of the circuit is done using the Cadence Virtuoso Tool.
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